J. Vukajlovic-Plestina, W.Kim, L. Ghisalberti, Georgios Varnavides, G. Tutuncuoglu, H. Potts, M. Friedl, L. Guniat, W.C. Carter, V.G. Dubrovskii, A. Fontcuberta i Morral
Posted on Publisher's version
III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.